The increasing complexity of semiconductor devices — particularly those utilizing stacked dies or stair-arranged multi-die assemblies embedded in molding compounds — presents substantial challenges for physical failure analysis (FA). Conventional FA workflows typically employ a combination of mechanical, chemical, laser-based, and plasma-based material-removal techniques, with Focused Ion Beam (FIB) methods playing a critical role in site-specific cross-sectioning and localized access. While FIB techniques offer high precision, they are time-intensive, operator-dependent, and prone to preparation-induced artifacts. Ultrashort-pulse laser ablation, by contrast, enables rapid material removal with minimal heat-affected zones and represents a promising alternative for sample preparation in FA workflows. This case study presents a laser-first, sensor-assisted de-processing approach designed to expose target dies in stacked microelectronic devices. The workflow integrates in-situ depth measurement and plasma monitoring to establish a closed-loop, semi-automated process that supports reliable endpoint identification and condition-based process termination. By enabling the controlled removal of molding compound and intermediate dies, the workflow allows early-stage failure analysis to be conducted without requiring FIB processing. FIB remains an optional downstream tool for detailed inspection when needed. Application examples demonstrate precise exposure of target die surfaces with minimal functional or cosmetic damage. Depth measurement ensures reliable stopping at the desired layer, while the plasma monitoring unit detects material transitions between molding compound, passivation, and silicon, thereby maintaining process control. This approach increases sample preparation throughput, reduces the risk of over-ablation, minimizes tool-to-tool transfers, and supports reproducible FA in high-volume environments.