Electromechanical Properties of Monolayer Sn-dichalcogenides

EasyChair Preprint no. 3977

Abstract

We investigate electromechanical properties of monolayer SnX₂ (X = Se, Te) with 1T structure as a function of charge (electron and hole) doping by using first-principles calculations. We find that the monolayer SnSe₂ shows a semiconductor-metal transition for the case of heavy electron doping, while SnTe₂ retains the metallic properties under both electron and hole dopings. The actuation strain of SnX₂ in the case of electron doping is substantially larger than those of hole doping. Moreover, the effect of charge doping on ideal strength and ideal strain of the monolayer SnX₂ is also discussed.

Keyphrases: artificial muscles, density functional theory, ideal strength

@Booklet{EasyChair:3977,
  author = {Bach Le Xuan and Thanh Vuong Van and Bao Hoang Van and Do Van Truong and Hung Nguyen Tuan},
  title = {Electromechanical Properties of Monolayer Sn-dichalcogenides},
  howpublished = {EasyChair Preprint no. 3977},

  year = {EasyChair, 2020}}