Space Charge Limited Conduction in GaAsSb Nanowires: a Study of the Effects of Annealing Temperature and Time

EasyChair Preprint 14380

Abstract

This study investigates the impact of annealing temperature and time on space charge limited conduction (SCLC) in GaAsSb nanowires, a material of growing interest for electronic and optoelectronic applications. GaAsSb nanowires were synthesized and subjected to annealing treatments across a range of temperatures and durations to explore how these parameters influence their electrical conduction properties. The study employed a combination of electrical measurements, structural analysis, and surface morphology characterization to evaluate the effects.

Results reveal that both annealing temperature and time significantly affect the SCLC behavior of GaAsSb nanowires. Specifically, increased annealing temperature enhances electrical conductivity by improving carrier mobility and reducing deep-level traps. Conversely, prolonged annealing times lead to variations in conduction mechanisms, attributed to changes in nanowire morphology and crystal quality. The study provides a detailed analysis of the relationship between annealing conditions and SCLC, offering insights into optimizing fabrication processes for enhanced performance in electronic and optoelectronic devices. These findings contribute to a deeper understanding of SCLC in nanowires and highlight potential pathways for improving device characteristics through tailored annealing strategies.

Keyphrases: Annealing temperature, Annealing time, GaAsSb Nanowires, Space Charge Limited Conduction, Trap density, carrier mobility

@booklet{EasyChair:14380,
  author    = {Docas Akinyele},
  title     = {Space Charge Limited Conduction in GaAsSb Nanowires: a Study of the Effects of Annealing Temperature and Time},
  howpublished = {EasyChair Preprint 14380},
  year      = {EasyChair, 2024}}