Download PDFOpen PDF in browserHigh-Performance AlGaN-Based flip-chip Ultraviolet Light-Emitting Diodes with epitaxial ITO/Al reflective mirror and Symmetry Electrode arrangementEasyChair Preprint 5534 pages•Date: October 3, 2018AbstractAlGaN-Based flip-chip Ultraviolet Light-Emitting Diodes at 365 nm with epitaxial ITO transparent ohmic contact layers and Al reflective were fabricated. The epitaxial ITO thin film exhibits higher transmittance than that of sputter ITO at 365nm, which is 93.6% and 85%, respectively. The epitaxial ITO thin film is more suitable for 365nm UV-LED. And the reflectance of the ITO/Al layers is 81.2% at 365nm, much higher than that of the ITO/Ag layers, which is only 53.2% at 365nm. When the current injection is 350mA, the forward voltages are 3.43V and 4.05V for flip-chip UV-LED and conventional UV-LED, respectively. The forward voltages of flip-chip UV-LED is much lower than that of conventional UV-LED, because the series resistance (Rs) of the flip-chip UV-LED is 0.73 Ω, much lower than 2.98 Ω of conventional UV-LED. The flip-chip UV-LED with epitaxial ITO/Al reflective mirror and Symmetry Electrode arrangement is more suitable for high power application. Keyphrases: 365nm, Ultraviolet Light-Emitting Diodes, epitaxial ITO
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