High-Performance AlGaN-Based flip-chip Ultraviolet Light-Emitting Diodes with epitaxial ITO/Al reflective mirror and Symmetry Electrode arrangement

EasyChair Preprint no. 553

Abstract

AlGaN-Based flip-chip Ultraviolet Light-Emitting Diodes at 365 nm with epitaxial ITO transparent ohmic contact layers and Al reflective were fabricated. The epitaxial ITO thin film exhibits higher transmittance than that of sputter ITO at 365nm, which is 93.6% and 85%, respectively. The epitaxial ITO thin film is more suitable for 365nm UV-LED. And the reflectance of the ITO/Al layers is 81.2% at 365nm, much higher than that of the ITO/Ag layers, which is only 53.2% at 365nm. When the current injection is 350mA, the forward voltages are 3.43V and 4.05V for flip-chip UV-LED and conventional UV-LED, respectively. The forward voltages of flip-chip UV-LED is much lower than that of conventional UV-LED, because the series resistance (Rs) of the flip-chip UV-LED is 0.73 Ω, much lower than 2.98 Ω of conventional UV-LED. The flip-chip UV-LED with epitaxial ITO/Al reflective mirror and Symmetry Electrode arrangement is more suitable for high power application.

Keyphrases: 365nm, epitaxial ITO, Ultraviolet Light-Emitting Diodes

@Booklet{EasyChair:553,
  author = {Bingfeng Fan and Yuqin Lao and Linchao Yan and Xuejin Ma and Zimin Chen and Yi Zhuo and Yanli Pei and Gang Wang},
  title = {High-Performance AlGaN-Based flip-chip Ultraviolet Light-Emitting Diodes with epitaxial ITO/Al reflective mirror and Symmetry Electrode arrangement},
  howpublished = {EasyChair Preprint no. 553},
  doi = {10.29007/bm42},
  year = {EasyChair, 2018}}