Illuminations Condition Effect on Optical Properties of Nanocrystalline Porous Silicon

EasyChair Preprint no. 3284

Abstract

  In this report, laser assisted in electrochemical etching technique PECE to prepare porous silicon layers under the constant conditions was used. To confirm the possibility of using different wavelengths of laser light to control the thickness of structures and porosity of silicon layers, a scanning electron microscope and weight measurements techniques were used to study of morphology of porous surface and its porosity. It was found that the porosity values ​​according to the different wavelengths have same power density approximately and which ranged from 39 to 53% towards the shortest wavelength. The intensity of the integrated peak absorption of Si-H and O-H vibrations demonstrated in the FTIR spectra of these samples was calculated. In this work, optical properties dependence of porous silicon crystalline size is analyzed and correlated to photoluminescence spectra. It’s clear that the Photoluminescence PL peak energy was decreasing from 2.37 to 2.10ev, and corresponding the increasing in refractive indexes. The peak PL intensity dropped from short wavelength (blue) toward long wavelength in visible region with large than 50% ratio.

Keyphrases: FTIR, PECE, Photo luminescence, porosity, porous silicon, refractive index, SEM

@Booklet{EasyChair:3284,
  author = {Sarab T. Kasim and Hasan Hadi},
  title = {Illuminations Condition Effect on Optical Properties of Nanocrystalline Porous Silicon},
  howpublished = {EasyChair Preprint no. 3284},

  year = {EasyChair, 2020}}