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![]() Title:GaN-Based Single Stage Low Noise Amplifier for X-Band Applications Authors:Gizem Tendürüs Çağlar, Yunus Erdem Aras, Emirhan Urfalı, Doğan Yılmaz, Ekmel Özbay and Sedat Nazlıbilek Conference:MMS2022 Tags:GaN HEMT, low noise amplifier, MMIC, SiC, source degeneration and X-band Abstract: Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8 – 11 GHz by using HEMTs with source degeneration in 0.15 μm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V/20 mA. GaN-Based Single Stage Low Noise Amplifier for X-Band Applications ![]() GaN-Based Single Stage Low Noise Amplifier for X-Band Applications | ||||
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