Widespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study of the mechanisms of formation of photometric characteristics of the integrated device in the near illumination zone, where the law of inverted squares is violated. A mathematical model of the multicomponent beam-diode module is proposed. On its basis the analysis of influence of the parameters of separate beam sources on the deformation of the indicatrix of radiant intensity at transition from the far zone to the near one is carried out. It is shown that the determining parameter of the indicatrix change in longitude and polar distance is the distribution in the plane of the modulus of the product of the radiant intensity of a single diode on its polar radius vector. The displacement of the polar angle of the maximum of the vector of the diode radiant intensity is more significant for wide radiation patterns than for concentrated ones. For specific parameters of diodes and geometry of their location the suitability of the proposed model for a priori modeling of beam-diode modules is illustrated.