Download PDFOpen PDF in browserThe disorder effect on the electronic properties of ternary alloy ZnxHg1-xTeEasyChair Preprint 16496 pages•Date: October 13, 2019AbstractOur work consists to study the electronic properties of ternary alloy semiconductor ZnxHg1-xTe in the structure zinc-blende. We used the empirical pseudopotential method (E.P.M) coupled with virtual crystal approximation (VCA) with and without taking account the compositional disorder effect. We calculated the energy gaps and and and the width of the valence band as well as the antisymmetric gap as a function of composition x of Zinc. We also determined the bands structures of this alloy. A special attention was accentuated on the compositional disorder effect. We can conclude that the methods used are simple and reliable. Generally, the agreement between our results for the electronic properties, with the experimental and theoretical results available is satisfactory. Keyphrases: Pseudopotential, alloys ZnHgTe, virtual crystal approximation.
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