ICSCRM 2025: The 22nd International Conference on Silicon Carbide and Related Materials Busan, South Korea, September 14-19, 2025 |
Conference website | https://icscrm2025.org/ |
Submission link | https://easychair.org/conferences/?conf=icscrm2025 |
Abstract registration deadline | April 30, 2025 |
Submission deadline | April 30, 2025 |
What is ICSCRM 2025?
ICSCRM (International Conference on Silicon Carbide and Related Materials) is a time-honored international academic gathering, commencing in Washington D.C. in 1987. The conference serves as a yearly opportunity for researchers and experts to disseminate cutting-edge research findings, engage in discussions, and exchange novel insights on silicon carbide and its applications. ICSCRM 2025 will proudly host its 22nd edition in Busan, South Korea, a stronghold of semiconductor manufacturing and rapidly advancing silicon carbide technologies. The conference will present an exceptional program, including top-tier tutorials, keynote lectures, oral and poster presentations, alongside an exhibition showcasing the latest technologies and products in the field.
Submission Guidelines
All papers must be original and not simultaneously submitted to another journal or conference. The following presentation categories are welcome:
- Oral Presentations
- Poster Presentation
List of Tracks
- Track 1: Material and Growth
- Bulk and epitaxial growth
- Novel growth techniques
- Substrate or epitaxial layer processing
- Fundamental material studies
- Other materials grown on SiC (e.g. graphene, III-N compounds, diamond, etc.)
- Track 2: SiC Defects and Characterization
- Fundamental properties
- Extended SiC crystal defects
- Defect imaging and mitigation
- Characterization techniques
- Surfaces and interfaces
- Track 3: SiC Device Process and Characterization
- Ohmic and Schottky contacts
- Ion implantation doping
- SiO2/SiC gate processing
- Thermal and laser annealing
- Novel high-k dielectrics
- Polishing, grinding and wafer splitting
- Track 4: SiC Devices Design and Characterization
- Device design and testing
- Novel device concepts and characterization
- Modelling and simulation
- Novel Measurements techniques
- Track 5: SiC Quantum Properties and Applications
- Theoretical and experimental studies
- Optical and electrical quantum techniques
- Magnetic, electric field sensors
- Temperature sensors
- Single-photon sources and detectors
- Track 6: SiC Packaging, Reliability and Systems
- Applications in Renewable Energy & Energy Storage, Transportation, Grid Power Systems
- High temperature and radiation
Committees
You can find detailed information about the committee at the following link: https://icscrm2025.org/about/committee.
Invited Speakers
- TBA
Publication
- TBA
Venue
The conference will be held at BEXCO, in Busan, South Korea
Contact
All questions about submissions should be emailed to secretariat@icscrm2025.org
Sponsors
- TBA