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![]() Title:Experimental Characterization of Switching Losses in SiC-based DAB Converters Conference:COMPEL 2025 Tags:DAB, Layout parasitics, Partial ZVS turn-on loss, SiC MOSFET, Soft-switching and Turn-off loss Abstract: Accurate determination of the switching losses is essential for the design and operation of soft-switched converters such as dual active bridge (DAB), especially when operating at higher switching frequencies. In a soft-switched converter, the turn-off loss is a significant switching loss mechanism. Furthermore, a low current at the switching instant may result in partial zero-voltage-switching (ZVS), which also leads to additional switching loss. Analytical loss-modeling approaches become increasingly complex due to the presence of nonlinear output capacitance, device parasitics, and printed-circuit-board layout effects. This paper presents an experimental methodology to accurately characterize switching losses, including partial ZVS turn-on and turn-off losses, across various operating modes of the DAB converter. Using the actual converter setup, the necessary equivalent circuits are identified for loss characterization across different operating modes of the DAB converter. The proposed methodology is validated using SPICE-based simulation and experiments conducted on a 40kW SiC-based DAB hardware prototype. Experimental Characterization of Switching Losses in SiC-based DAB Converters ![]() Experimental Characterization of Switching Losses in SiC-based DAB Converters | ||||
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