TALK KEYWORD INDEX
This page contains an index consisting of author-provided keywords.
| ( | |
| (cross-sectional nanoprobing) | |
| (electrical failure analysis) | |
| (fault isolation) | |
| (nanoprobing) | |
| - | |
| - automotive electronics failures on system level | |
| - automotive electronics reliability | |
| - early life automotive electronics failures | |
| 2 | |
| 28nm UTBB FD-SOI | |
| 2DEG | |
| 3 | |
| 3D integration | |
| 3D-Integration | |
| 4 | |
| 4H-SiC | |
| 6 | |
| 65 nm | |
| A | |
| abalanche breakdown | |
| AC stress | |
| accelerated aging | |
| Accelerated Life Test | |
| acceleration modelling | |
| Acid decapsulation | |
| Acoustic Microscopy | |
| activation energy | |
| AEC-Q006 | |
| AFM-based nanoprober | |
| aging | |
| Aging Law | |
| Aging tests | |
| Al Power metal lines | |
| AlGaN/GaN | |
| AlGaN/GaN High Electron Mobility Transistor (HEMT) | |
| Aluminium Graphite | |
| Aluminum | |
| anomaly detection | |
| Arrhenius law | |
| Assembly | |
| Assessment method | |
| Atmospheric radiation | |
| Atom probe tomography | |
| AuSn 8020 | |
| AuSn interconnection | |
| Autoclave | |
| Autocorrelation | |
| Automatization | |
| Avalanche | |
| B | |
| Bending test | |
| BEOL | |
| bias stress | |
| Binary collision approximation | |
| board level reliability | |
| Body diode | |
| body effect | |
| Bodybias | |
| Bond wire | |
| bond-pad | |
| Breakdown voltage | |
| breakdown voltage drift | |
| Brittle and ductile failure | |
| BTI | |
| Buffer layer | |
| Bulk CMOS | |
| C | |
| CAD navigation | |
| CAFM | |
| Calendar ageing | |
| Cantilever | |
| capability of heat dissipation | |
| capacitor | |
| catastrophic damage | |
| Cathodoluminescence | |
| charge injection | |
| Charged Coupled Devices | |
| charged particle beam | |
| charging-discharging | |
| Chemical Over-etched on Bond-pad issue | |
| Clustering model | |
| CMOS 6T SRAM | |
| Cohesive Zone Model | |
| Collected Charge | |
| Computational Modeling | |
| condition monitoring | |
| conductive anodic filament | |
| Conductive filament | |
| constant stress accelerated degradation testing | |
| copper corrosion | |
| correlative model | |
| corrosion | |
| Cosmic rays | |
| crack guidance | |
| cracking risk | |
| Credible Improvement Potential | |
| creeping corrosion | |
| critical charge | |
| Critical degradation voltage | |
| Critical energy | |
| critical sensor application | |
| cross section curve | |
| Cross-section | |
| CTE adjustment | |
| Cu nanoparticle joint | |
| current density distribution | |
| current filament | |
| current imaging | |
| current sensor | |
| Custom I/O ring | |
| D | |
| damp heat | |
| Dark line defect (DLD) | |
| data recovery | |
| DC-link capacitors | |
| decay path | |
| decay rate | |
| Defect | |
| Defect density | |
| degradation | |
| Delamination | |
| design for higher robustness | |
| design for reliability | |
| design recommendations | |
| Destructive | |
| device degradation | |
| device instability | |
| Device Reliability | |
| device under test | |
| Diagnosis tools | |
| DIC | |
| Die strength testing | |
| Dielectric charging | |
| Diffusion | |
| Digital combinational circuit | |
| Diode | |
| Direct liquid cooled | |
| Dislocations | |
| Dispersal | |
| DLTS | |
| Donut Via | |
| Double SOI | |
| dynamic mechanical stress test | |
| E | |
| e-mobility | |
| e-mode | |
| ebic | |
| EDA | |
| EDA tools | |
| EDS | |
| Electrical and Physical Failure Analysis | |
| electrical fast transient | |
| Electrical properties | |
| Electro Optical Probing | |
| electrolytic capacitors | |
| ElectroMagnetic Interference | |
| Electromagnetic susceptibility | |
| Elemental Characterization | |
| end of life Weibull statistics | |
| end-of-life criterium | |
| endurance | |
| Energy release rate | |
| Energy storage systems | |
| ESD | |
| ESD Network | |
| ESD protection strategy | |
| eWLB | |
| F | |
| Failure | |
| Failure Analysis | |
| Failure Inspection | |
| failure mechanism | |
| Failure Mechanisms | |
| Failure rate | |
| Failure-Characterization | |
| falsh memory | |
| Fast recovery Diode | |
| FDSOI | |
| FEA | |
| FEM simulations | |
| FIB | |
| FIB-SEM | |
| FIB/SEM/TEM | |
| Finite Element Method | |
| finite element simulation | |
| Fishbone pattern | |
| Flash | |
| Flex crack | |
| flexible a-Si:H/μc-Si:H PV | |
| flip flop | |
| Focused ion beam | |
| foldable device | |
| Forward body bias | |
| forward gate bias overstress | |
| FPGA | |
| Fracture mechanics | |
| Fracture mechanism | |
| Fracture Strength estimation | |
| Full-frame CCD | |
| Fully Depleted SOI | |
| G | |
| Ga contamination | |
| Gallium Nitride | |
| Gallium Nitride (GaN) | |
| Gamma | |
| GaN | |
| GaN HEMT | |
| GaN HEMTs | |
| GaN-HEMT | |
| Gate Electrode Workfunction Engineered (GEWE) | |
| gate oxide | |
| gate workfunction | |
| gerneric model | |
| GHz SAM | |
| Grain boundary | |
| Graphite | |
| H | |
| H/Ar treatment | |
| handling | |
| Hardness | |
| HAST | |
| HCI | |
| healing phases | |
| heat pipe | |
| Heatsink | |
| Heavy-Ion Impact | |
| HEMT | |
| heterostructure | |
| HFETs | |
| HfO2 | |
| HfO2 dielectric | |
| high frequency layer | |
| High luminosity blue LEDs | |
| High power device | |
| High power laser diode | |
| high temperature | |
| high temperature and current | |
| High temperature applications | |
| High Temperature Operation Life (HTOL) | |
| High Temperature Reverse Bias | |
| High Temperature Reverse Bias test | |
| high voltage | |
| high-k dielectric | |
| High-κ Metal Gate (HKMG) | |
| HKMG | |
| hot carrier | |
| hot carrier degradation | |
| hot-carrier | |
| Hot-carrier degradation | |
| Hybrid and Electric Vehicles | |
| hydrostatic load | |
| I | |
| IC reliability | |
| IGBT | |
| IGBT Aging | |
| IGBT Module | |
| III-V semiconductor | |
| Impact ionization | |
| implantation | |
| Infrared microscopy | |
| InGaN | |
| InGaZnO thin film transistor | |
| InGaZnO thin film transistor reliability | |
| instability | |
| Insulated Gate Bipolar Transistor | |
| Integrated Circuit Failure Analysis | |
| integrated power switch | |
| interconnect reliability | |
| Intermetallics | |
| invisible defect | |
| J | |
| JBS Diode | |
| Junction Temperature estimation | |
| K | |
| Kernel Principle Component Analysis | |
| L | |
| Laser | |
| Laser deprocessing | |
| Laser Deprocessing Technique | |
| Laser diode | |
| Laser Modulation | |
| lead-free solder | |
| leakage | |
| Leakage current | |
| Leakage current measurement | |
| LED | |
| LED module | |
| Life Prediction | |
| life-time | |
| Lifetime | |
| lifetime modelling | |
| Light emitting diode | |
| light-emitting diode | |
| Linear Energy Transfer | |
| Lithium batteries | |
| local deep level transient spectroscopy | |
| Lock-In Analysis | |
| Lock-in-thermography | |
| Long-term experiment | |
| LUT | |
| M | |
| magnetic current imaging | |
| Magnetic Flip-Flop | |
| magnetoresistive sensors | |
| Majority voters | |
| MCI | |
| mechanical fatigue testing | |
| Mechanical reliability | |
| mechanism | |
| Memory Cell | |
| MEMS | |
| MEMS inertial sensors | |
| MEMS sensor | |
| metalization systems | |
| Metallization degradation | |
| microclimate | |
| microcontroller | |
| Mismatch of coefficients of thermal expansion | |
| Mission profile | |
| modeling | |
| Modelling | |
| Moisture | |
| Molding compounds | |
| Molecular dynamics | |
| Monitoring | |
| MOS transistor | |
| MOSFET | |
| Multilayer ceramic capacitor | |
| multiple stress conditions | |
| multivariable linear regression | |
| mutual information | |
| N | |
| Na fault injection | |
| Nano Filament | |
| Nano-Crystalline Diamond | |
| nano-probing | |
| Nano-wire | |
| nanoprobing | |
| nanowire | |
| NBED | |
| NBTI | |
| NBTI model | |
| NDT | |
| negative bias illumination stress | |
| neutral trap | |
| nickel palladium | |
| nMOSFETs | |
| non-destructive analysis | |
| Non-Gaussian | |
| Normally-off | |
| Numerical Simulation | |
| NVM array reliability | |
| O | |
| ON-state | |
| On-state resistance computation | |
| Open circuit | |
| Optical power | |
| Oscillations | |
| Oxide based RRAM | |
| Oxide Electrifc Field | |
| oxide thin film transistor | |
| OxRAM | |
| P | |
| p-GaN | |
| p-GaN gate | |
| package board interaction | |
| Passive thermal cycling | |
| PCB embedded | |
| PCBA | |
| PEDOT:PSS | |
| Percolation | |
| performance | |
| Permanent Faults | |
| Phosphorus | |
| PID | |
| Plasma charging | |
| PMOS | |
| Polyimide | |
| polymer | |
| Positive Bias Temperature Instability (PBTI) | |
| Potential induced degradation | |
| power converter | |
| Power cycle | |
| power cycling | |
| Power cycling test | |
| power density | |
| power device | |
| Power Diode | |
| power electric converters | |
| power electronics | |
| power loss | |
| power module | |
| Power modules assembly | |
| Power MOSFET | |
| Power semiconductor module | |
| power semiconductor reliability | |
| Pressure Packaging | |
| printed circuit board assembly | |
| Prited circuit board | |
| Probabilistic transfer matrix | |
| process assessment | |
| Process variation resilient | |
| Propagation delay | |
| Proton induced single event upset | |
| pull test | |
| pulsed laser | |
| PV modules | |
| Q | |
| qualification | |
| Quantum Subconductance | |
| quantum well | |
| R | |
| Radiation | |
| radiation effect | |
| Radiation effects | |
| Rayleigh wave | |
| Read Disturb | |
| RECOVERY | |
| Reistive paths | |
| Reliability | |
| reliability analysis | |
| reliability evaluation | |
| Reliability evaluation efficiency | |
| Reliability Importance | |
| reliability of electronics | |
| Reliability-aware simulation | |
| Repetition | |
| ReRAM | |
| Residual stress | |
| Resilience | |
| Resistive switching | |
| Resitive RAM | |
| retentation | |
| reverse-bias stress | |
| RF LDMOS | |
| RF MEMS capacitive switches | |
| Ring Oscillator | |
| Ring oscillators | |
| Ringoscillator | |
| Robustness | |
| Rogowski coil | |
| RRAM | |
| Ruggedness | |
| S | |
| salt spray test | |
| SAM | |
| Scanning acoustic microscopy | |
| Scanning Infrared Stress Explorer | |
| Scanning Microwave Microscopy | |
| scanning nonlinear dielectric microscopy | |
| Schottky Diode | |
| second bond | |
| second level reliability | |
| semiconductor | |
| sensor selection | |
| SET | |
| SET Cartography | |
| SEU | |
| SEU mapping | |
| Severe aging cycles | |
| Short circuit | |
| short-circuit | |
| shrinkage | |
| SiC | |
| SiC MOSFET | |
| SiC power module | |
| SiC Schottky diode | |
| Silicon | |
| silicon and oxide corrosion | |
| Silicon Carbide | |
| Silicon Nanowire (SiNW) | |
| silver corrosion | |
| silver sinter | |
| Simulation | |
| Single Event Transient | |
| Single Event Transients | |
| single event upset | |
| Single-Event Transients | |
| Single-Event Upsets | |
| SiO2/SiC interface | |
| SMM | |
| solar cells | |
| Solder cracking | |
| solder fatigue | |
| Solder joint | |
| solder joint reliability | |
| Solid-liquid interdiffusion (SLID) bonding | |
| Space Proton Flux | |
| spectral analysis | |
| SRAM | |
| SRAM FPGA | |
| SRIM | |
| Stacked Gate | |
| STANDARD DEVIATIONS | |
| static mechanical stress | |
| STEM | |
| Step stress | |
| step-down stress accelerated degradation testing | |
| step-up stress accelerated degradation testing | |
| stitch peel | |
| stitch pull | |
| Strain | |
| stress measurement | |
| Stress-induced Birefringence | |
| STT-MTJ | |
| stuck-at failure modes | |
| surface morphology | |
| switching | |
| system level ESD | |
| system reliability | |
| T | |
| T-Cad device simulation | |
| TCAD | |
| TCOB | |
| TED | |
| Telluric radiation | |
| TEM | |
| temperatur cycling on board | |
| Temperature Compensation Point (TCP) | |
| Tensile properties | |
| Test bench | |
| Thermal accelerated tests | |
| Thermal conductivity | |
| Thermal Laser Stimulation | |
| Thermal resistance | |
| Thermal runaway | |
| thermal simulation | |
| thermal stress | |
| thermal transient procedure | |
| Thermo-mechanical fatigue | |
| thermo-mechanical finite element analysis | |
| Thermo-mechanical stress | |
| threshold voltage | |
| Threshold voltage drop | |
| Through Silicon Vias | |
| TID | |
| TID test | |
| time dependent breakdown | |
| time-domain waveform measurement | |
| Time-Frequency Acquisition | |
| Tip | |
| Total ionizing dose | |
| Transconductance | |
| Transient simulation | |
| Transient thermal analysis | |
| transparent source and drain | |
| Traps | |
| TRIDYN | |
| TRIM | |
| TSD | |
| TSV | |
| TSVs | |
| U | |
| UIS | |
| UIS test | |
| Ultra-short gate length | |
| V | |
| Variability | |
| Vccmin | |
| VCE(T)-method | |
| VCSEL | |
| Verification tool | |
| Vibration Fatigue | |
| VLSI devices | |
| Voids | |
| voltage stress | |
| VTH DISTRIBUTIONS | |
| W | |
| Wafer level bonding | |
| wafer level packaging | |
| water film | |
| Wavelets Transform | |
| wide band-gap semiconductor | |
| wide bandgap | |
| width dependence | |
| wire bond fatigue | |
| WLR | |
| X | |
| X-Ray | |
| XFEM | |
| XSEM | |
| Y | |
| Yield enhancement | |
| Z | |
| ZnO:B TCO thin film | |